Very low temperature growth of polycrystalline silicon using SiF4H2

✍ Scribed by Bong Yeol Ryu; Jai Il Ryu; Hyun Chul Kim; Jin Jang

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 500 KB
• Volume: 101
• Category: Article
• ISSN: 0038-1098
• DOI: 10.1016/s0038-1098(96)00524-8

✦ Synopsis

We have studied the growth of polycrystalline silicon by remote plasma chemical vapor deposition using a SiFd/Hz mixture at a low temperature of 1OO'C. Thin film is composed of grains in which there are many small sub-grains of less than IOnm. The film exhibited the polycrystalline volume fraction of 84.4X, the optical band gap of 2.57eV and efficient visible photoluminescence centered at 2.1 eV at room temperature. The photoluminescence appears to be arised by the quantum confinement effect in nano-size crystallites surrounded by F and H atoms.