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Low-temperature epitaxial growth of undoped and n-doped silicon by photochemical vapor deposition using SiH4/SiH2Cl2/H2/PH3 mixtures

✍ Scribed by J.C. Alonso; T. Oshima; A. Yamada; M. Konagai; K. Takahashi


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
612 KB
Volume
237
Category
Article
ISSN
0040-6090

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