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Very low temperature growth and doping of silicon MBE layers

✍ Scribed by H. Jorke; H. Kibbel; F. Schäffler; A. Casel; H.-J. Herzog; E. Kasper

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
186 KB
Volume
95
Category
Article
ISSN
0022-0248

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Doping of Silicon Epitaxial Layers With
Doping of Silicon Epitaxial Layers With Arsenic at Very High Concentrations
✍ Dr. H. Krause 📂 Article 📅 1969 🏛 John Wiley and Sons 🌐 English ⚖ 370 KB

## Doping of Silicon Epitaxial Layers with Arsenic at very High Concentrations Silicon epitaxial layers grown from reduction of SiCl, in H, have been highly doped with arsenic. As an upper limit of doping for layers without structural defects typical to high doping a value of about 2 . 1019 (3111-