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Low temperature processed mosfet's using laser recrystallized polycrystalline silicon films

✍ Scribed by Han-Sheng Lee


Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
349 KB
Volume
26
Category
Article
ISSN
0038-1101

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Low temperature processed MOSFET's using
πŸ“‚ Article πŸ“… 1986 πŸ› Elsevier Science 🌐 English βš– 93 KB

Low temperature processed MOSFET's using laser recrystalized polycr~slalline silicon films IlAN-SHENG LEE SolidSt. Electron 26 (11), 1123 (1983) An n-channel MOS transistor was fabricated on a laser recrystallized polycrystaline silicon film at temperatures below 630~ The gate oxide was sputter depo