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Low temperature processes MOSFET's using laser recrystallized polycrystalline silicon films: Han-Sheing Lee Solid St. Electron. 26, (11) 1123 (1983)


Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
95 KB
Volume
16
Category
Article
ISSN
0026-2692

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Low temperature processed MOSFET's using
๐Ÿ“‚ Article ๐Ÿ“… 1986 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 93 KB

Low temperature processed MOSFET's using laser recrystalized polycr~slalline silicon films IlAN-SHENG LEE SolidSt. Electron 26 (11), 1123 (1983) An n-channel MOS transistor was fabricated on a laser recrystallized polycrystaline silicon film at temperatures below 630~ The gate oxide was sputter depo