Low temperature processed MOSFET's using
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Article
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1986
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Elsevier Science
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English
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Low temperature processed MOSFET's using laser recrystalized polycr~slalline silicon films IlAN-SHENG LEE SolidSt. Electron 26 (11), 1123 (1983) An n-channel MOS transistor was fabricated on a laser recrystallized polycrystaline silicon film at temperatures below 630~ The gate oxide was sputter depo