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Low temperature processed MOSFET's using laser recrystallized polycrystalline silicon films : Han-Sheng Lee. Solid-St. Electron.26 (11), 1123 (1983)


Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
132 KB
Volume
24
Category
Article
ISSN
0026-2714

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Low temperature processed MOSFET's using
๐Ÿ“‚ Article ๐Ÿ“… 1986 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 93 KB

Low temperature processed MOSFET's using laser recrystalized polycr~slalline silicon films IlAN-SHENG LEE SolidSt. Electron 26 (11), 1123 (1983) An n-channel MOS transistor was fabricated on a laser recrystallized polycrystaline silicon film at temperatures below 630~ The gate oxide was sputter depo