Low temperature processed MOSFET's using laser recrystalized polycrystalline silicon films: Han-Sheng Lee Solid St. Electron 26 (11), 1123 (1983)

• Publisher: Elsevier Science
• Year: 1986
• Tongue: English
• Weight: 93 KB
• Volume: 17
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(86)80142-2

✦ Synopsis

Low temperature processed MOSFET's using laser recrystalized polycr~slalline silicon films IlAN-SHENG LEE SolidSt. Electron 26 (11), 1123 (1983) An n-channel MOS transistor was fabricated on a laser recrystallized polycrystaline silicon film at temperatures below 630~ The gate oxide was sputter deposited at 200~ Lasers were used for substrate recrystallization, implantation damage annealing and dopant drive-in. An electron field effect mobility higher than 100cm"/V.sec was observed on the finished transistors. With 10 V applied to the gate of the transistor for 2 hr, less than a 20 m V shift in threshold voltage was observed.