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Low-temperature silicon oxide films deposited using a CO2 laser

✍ Scribed by D. Fernández; P. González; J. Pou; B. León; M. Pérez-Amor

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
217 KB
Volume
54
Category
Article
ISSN
0169-4332

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✍ Hitoshi Habuka; Hiroshi Ohmori; Yusuke Ando 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 725 KB

A silicon carbide film is formed at low temperatures on a silicon surface by chemical vapor deposition using monomethylsilane gas along with hydrogen chloride gas in ambient hydrogen at atmospheric pressure. A 0.2-μm thick film, obtained at 1073 K and at a hydrogen chloride gas concentration greater