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Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors

✍ Scribed by Cheng, S.-Y.; Lee, M.H.; Chang, S.T.; Lin, C.-Y.; Chen, K.-T.; Hsieh, B.-F.

Book ID: 123177684
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 772 KB
Volume: 544
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2013.02.070

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