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High‐mobility p‐channel metal‐oxide‐semiconductor field‐effect transistor on strained Si

✍ Scribed by Nayak, D. K.; Woo, J. C. S.; Park, J. S.; Wang, K. L.; MacWilliams, K. P.

Book ID: 111913689
Publisher: American Institute of Physics
Year: 1993
Tongue: English
Weight: 573 KB
Volume: 62
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.109205

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