✦ LIBER ✦
Pure germanium epitaxial growth on thin strained silicon-germanium graded layers on bulk silicon substrate for high-mobility channel metal-oxide-semiconductor field-effect transistors
✍ Scribed by S. Dey; S. Joshi; D. Garcia-Gutierrez; M. Chaumont; A. Campion; M. Jose-Yacaman; S. K. Banerjee
- Book ID
- 107453714
- Publisher
- Springer US
- Year
- 2006
- Tongue
- English
- Weight
- 437 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0361-5235
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