We have investigated the energy band structure of the 40 nm gate length n-metal-oxidesemiconductor field effect transistor (MOSFET) recently fabricated by M. Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro and H. Iwai (IEEE Transaction on Electron Devices 42: 1822 (1995)). By the classical particl
✦ LIBER ✦
Energy band diagram of a Si metal-oxide-semiconductor field-effect transistor
✍ Scribed by Ying Fu; Willander, M.
- Book ID
- 114536143
- Publisher
- IEEE
- Year
- 1995
- Tongue
- English
- Weight
- 640 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0018-9383
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