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Study of velocity field characteristics in pseudomorphic Si0.8Ge0.2 p-channel metal-oxide-semiconductor field effect transistor

✍ Scribed by G. Ansaripour; G. Braithwaite; S. Agan; T.E. Whall; E.H.C. Parker

Book ID: 114156036
Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 134 KB
Volume: 51-52
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(99)00516-x

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