Experimental study on isolation edge effects in the short channel characteristics of metal oxide semiconductor field effect transistors (MOSFETs)
✍ Scribed by Toshiyuki Oishi; Katsuomi Shiozawa; Akihiko Furukawa; Yuji Abe; Yasunori Tokuda; Shinichi Satoh
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 265 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
We investigate experimentally the isolation edge shape effects on the short channel characteristics, i.e. the gate length dependence, of metal oxide semiconductor field effect transistors (MOSFETs) for various isolation structures, as compared with a reference MOSFET without influence of the isolation edges. For shallow trench isolation (STI), the effect, which is enhanced for gate lengths around the onset of the short channel effect and causes the threshold voltage (V ) to shift to the th lower voltage side than that by the short channel effect, is more prominent for the trench edge with the deeper dip. On the other hand, for the local oxidation of silicon (LOCOS) isolation with an elevated field oxide edge (i.e. the bird's beak), the effect, which is also enhanced around the appearance point of the short channel effect, causes the V values to go in the th opposite direction to the case of STI. These results indicate that the isolation edge effect depends on the gate length and can be decribed in terms of the surface potential at the isolation edge being modulated by the mixing between the short channel and the isolation edge effect.