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N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2gate dielectrics

✍ Scribed by Veena Misra; Manoj Kulkarni; Huicai Zhong

Book ID: 107452678
Publisher: Springer US
Year: 2001
Tongue: English
Weight: 350 KB
Volume: 30
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-001-0165-1

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