Electrical properties of metal–HfO2–silicon system measured from metal–insulator–semiconductor capacitors and metal–insulator–semiconductor field–effect transistors using HfO2 gate dielectric

✍ Scribed by Fu-Chien Chiu; Shun-An Lin; Joseph Ya-min Lee

• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 245 KB
• Volume: 45
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/j.microrel.2004.11.016