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Electrical and optical characteristics of InP enhancement mode metal/insulator/semiconductor field effect transistors with a novel anodic double-layer gate insulator

✍ Scribed by T Sawada; H Hasegawa; H Ohno


Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
556 KB
Volume
103
Category
Article
ISSN
0040-6090

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