✦ LIBER ✦
Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2and Al2O3
✍ Scribed by Takeyasu Saito; Kyung-ho Park; Kazuyuki Hirama; Hitoshi Umezawa; Mitsuya Satoh; Hiroshi Kawarada; Zhi-Quan Liu; Kazutaka Mitsuishi; Kazuo Furuya; Hideyo Okushi
- Book ID
- 107457156
- Publisher
- Springer US
- Year
- 2011
- Tongue
- English
- Weight
- 498 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0361-5235
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