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Hydrogen and hot electron defect creation at the Si(100)/SiO2interface of metal-oxide-semiconductor field effect transistors

✍ Scribed by Blair R. Tuttle; William McMahon; Karl Hess

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
82 KB
Volume
27
Category
Article
ISSN
0749-6036

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✦ Synopsis

We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO 2 interface of metal-oxide-semiconductor field effect transistors. With ab initio density functional calculations, the energetics and defect levels have been calculated for hydrogen in bulk silicon, bulk silicon dioxide and at their interface. We relate these calculations to several experiments and suggest a microscopic model for hydrogen-related hot electron degradation.

πŸ“œ SIMILAR VOLUMES

Hydrogen-related defect creation at the
Hydrogen-related defect creation at the Si(100)–SiO2interface of metal-oxide-semiconductor field effect transistors during hot electron stress
✍ B.R. Tuttle; K. Hess; L.F. Register πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 73 KB

We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO 2 interface of metal-oxide-semiconductor field effect transistors. Based on the energetics of hydrogen desorption from the interface between silicon and silicondioxide, we argue that the hard