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Hydrogen-related defect creation at the Si(100)–SiO2interface of metal-oxide-semiconductor field effect transistors during hot electron stress

✍ Scribed by B.R. Tuttle; K. Hess; L.F. Register

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
73 KB
Volume
27
Category
Article
ISSN
0749-6036

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✦ Synopsis

We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO 2 interface of metal-oxide-semiconductor field effect transistors. Based on the energetics of hydrogen desorption from the interface between silicon and silicondioxide, we argue that the hard threshold for hydrogen-related degradation may be considerably lower than the previously assumed value of 3.6 eV. Also, hydrogen atoms released from Si-H bonds at the interface by hot electron stress are trapped in bulk silicon near the interface.

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Hydrogen and hot electron defect creatio
Hydrogen and hot electron defect creation at the Si(100)/SiO2interface of metal-oxide-semiconductor field effect transistors
✍ Blair R. Tuttle; William McMahon; Karl Hess 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 82 KB

We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO 2 interface of metal-oxide-semiconductor field effect transistors. With ab initio density functional calculations, the energetics and defect levels have been calculated for hydrogen in bulk si