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Observations in trapping characteristics of positive bias temperature instability on high-k/metal gate n-type metal oxide semiconductor field effect transistor with the complementary multi-pulse technique

✍ Scribed by J.C. Liao; Y.K. Fang; Y.T. Hou; W.H. Wu; C.L. Hung; P.F. Hsu; K.C. Lin; K.T. Huang; T.L. Lee; M.S. Liang


Book ID
108290025
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
493 KB
Volume
516
Category
Article
ISSN
0040-6090

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