𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Self-aligned inversion n-channel In0.2Ga0.8As/GaAs metal–oxide–semiconductor field-effect-transistors with TiN gate and Ga2O3(Gd2O3) dielectric

✍ Scribed by C.P. Chen; T.D. Lin; Y.J. Lee; Y.C. Chang; M. Hong; J. Kwo

Book ID
108271680
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
623 KB
Volume
52
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Achieving very high drain current of 1.2
Achieving very high drain current of 1.23 mA/μm in a 1-μm-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFET
✍ T.D. Lin; P. Chang; Y.D. Wu; H.C. Chiu; J. Kwo; M. Hong 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 530 KB

Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect transistors (MOSFETs) using molecular beam epitaxy (MBE) deposited Al 2 O 3 /Ga 2 O 3 (Gd 2 O 3 ) [GGO] as gate dielectrics and TiN as metal gates were fabricated. The 1-mm-gate-length In 0.75 Ga 0.25 As MOSFETs