Achieving very high drain current of 1.23 mA/μm in a 1-μm-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFET
✍ Scribed by T.D. Lin; P. Chang; Y.D. Wu; H.C. Chiu; J. Kwo; M. Hong
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 530 KB
- Volume
- 323
- Category
- Article
- ISSN
- 0022-0248
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✦ Synopsis
Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect transistors (MOSFETs) using molecular beam epitaxy (MBE) deposited Al 2 O 3 /Ga 2 O 3 (Gd 2 O 3 ) [GGO] as gate dielectrics and TiN as metal gates were fabricated. The 1-mm-gate-length In 0.75 Ga 0.25 As MOSFETs have achieved a maximum drain current of 1.23 mA/mm, a peak transconductance of 464 mS/mm, and a peak field-effect electron mobility of 1600 cm 2 /V s. A new record of maximum drain current has been set, not only for III-V MOSFETs but also for all enhancement mode MOSFETs with similar device dimensions, regardless of channel materials and device configurations.