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Effect of interfacial oxide on electron mobility in metal insulator semiconductor field effect transistors with Al2O3 gate dielectrics

✍ Scribed by Kazuyoshi Torii; Yasuhiro Shimamoto; Shin-ichi Saito; Katsunori Obata; Tsuyoshi Yamauchi; Digh Hisamoto; Takahiro Onai; Masahiko Hiratani

Book ID: 108411299
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 147 KB
Volume: 65
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(03)00163-1

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