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GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3gate dielectrics grown by atomic layer deposition

✍ Scribed by P. D. Ye; G. D. Wilk; B. Yang; J. Kwo; H. -J. L. Gossmann; M. Frei; J. P. Mannaerts; M. Sergent; M. Hong; K. K. Ng; J. Bude

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