High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD)

✍ Scribed by Xiao-Hong Zhang; Benoit Domercq; Xudong Wang; Seunghyup Yoo; Takeshi Kondo; Zhong Lin Wang; Bernard Kippelen

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 902 KB
• Volume: 8
• Category: Article
• ISSN: 1566-1199
• DOI: 10.1016/j.orgel.2007.06.009