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A Novel Thin Al2O3 Gate Dielectric by ECR-Plasma Oxidation of Al for AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors

✍ Scribed by S. Ootomo; T. Hashizume; H. Hasegawa

Book ID: 104556537
Publisher: John Wiley and Sons
Year: 2003
Tongue: English
Weight: 245 KB
Volume: 0
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200390124

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