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Superior suppression of gate current leakage in Al2O3/Si3N4bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors

✍ Scribed by C. X. Wang; N. Maeda; M. Hiroki; T. Tawara; T. Makimoto; T. Kobayahsi; T. Enoki

Book ID: 107453403
Publisher: Springer US
Year: 2005
Tongue: English
Weight: 123 KB
Volume: 34
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-005-0111-8

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