Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

Fabrication of AlGaN/GaN double-insulato

Fabrication of AlGaN/GaN double-insulator metal-oxide-semiconductor high-electron-mobility transistors using SiO2and SiN as gate insulators

✍ Balachander, Krishnan ;Arulkumaran, Subramaniam ;Sano, Y. ;Egawa, Takashi ;Baska 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 164 KB

## Abstract We report on the fabrication of AlGaN/GaN double‐insulator MOSHEMTs using SiO~2~ and SiN as the prime gate insulators. Both the dielectrics showed enhanced saturation current density and pinch‐off voltage compared to conventional HEMTs. The SiO~2~/SiN/AlGaN/GaN MOSHEMTs exhibited a low