Fabrication of AlGaN/GaN double-insulator metal-oxide-semiconductor high-electron-mobility transistors using SiO2and SiN as gate insulators

✍ Scribed by Balachander, Krishnan ;Arulkumaran, Subramaniam ;Sano, Y. ;Egawa, Takashi ;Baskar, Krishnan

• Book ID: 105362959
• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 164 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200410002

✦ Synopsis

Abstract

We report on the fabrication of AlGaN/GaN double‐insulator MOSHEMTs using SiO~2~ and SiN as the prime gate insulators. Both the dielectrics showed enhanced saturation current density and pinch‐off voltage compared to conventional HEMTs. The SiO~2~/SiN/AlGaN/GaN MOSHEMTs exhibited a low current collapse and low leakage current compared to SiN MISHEMTs and unpassivated HEMTs. However, the SiN/SiO~2~/AlGaN/GaN MOSHEMTs exhibited a lower current collapse coupled with moderate leakage current compared to SiO~2~ MOSHEMTs and unpassivated HEMTs. The comparison of device dc characteristics of double‐insulator MOSHEMTs with single‐insulator MOSHEMTs revealed its superiority in reducing the problem of current collapse and leakage current simultaneously. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)