𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Hot-carrier dependent radiation effects in p-channel metal oxide semiconductor field effect transistors

✍ Scribed by N.C. Das; V. Nathan


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
249 KB
Volume
37
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Hydrogen and hot electron defect creatio
✍ Blair R. Tuttle; William McMahon; Karl Hess πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 82 KB

We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO 2 interface of metal-oxide-semiconductor field effect transistors. With ab initio density functional calculations, the energetics and defect levels have been calculated for hydrogen in bulk si