✦ LIBER ✦
Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature technique
✍ Scribed by J.G. Hwu; C.M. Lin; W.S. Wang
- Publisher
- Elsevier Science
- Year
- 1986
- Tongue
- English
- Weight
- 555 KB
- Volume
- 142
- Category
- Article
- ISSN
- 0040-6090
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