𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Regenerative switching in V-groove metal oxide semiconductor field-effect transistor structure

✍ Scribed by Jayant K. Bhagat

Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
512 KB
Volume
27
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Energy band structure of quantum-size me
Energy band structure of quantum-size metal-oxide-semiconductor field effect transistor
✍ Y. Fu; M. Karlsteen; M. Willander πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 169 KB

We have investigated the energy band structure of the 40 nm gate length n-metal-oxidesemiconductor field effect transistor (MOSFET) recently fabricated by M. Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro and H. Iwai (IEEE Transaction on Electron Devices 42: 1822 (1995)). By the classical particl

Metal-oxide-semiconductor field effect t
Metal-oxide-semiconductor field effect transistor using β€˜oxidizedΞΌc-Si/ultrathin oxide’ gate structure
✍ Seung Jae Baik; Jae Hyung Choi; Jeong Yong Lee; Koeng Su Lim πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 690 KB

The metal-oxide-semiconductor (MOS) field effect transistor (FET) using 'oxidized Β΅c-Si/ultrathin oxide' gate structure was studied. It was found that this structure shows negative differential resistance behavior, which can be explained by the Coulomb blockade effect of trapped carriers and immedia