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Stress immunity enhancement of the SiN uniaxial strained n-channel metal–oxide–semiconductor field-effect-transistor by channel fluorine implantation

✍ Scribed by Yung-Yu Chen; Chih-Ren Hsieh; Fang-Yu Chiu

Book ID: 113800649
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 373 KB
Volume: 52
Category: Article
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2011.12.023

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