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High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y 2 O 3

✍ Scribed by Nishimura, Tomonori; Lee, Choong Hyun; Tabata, Toshiyuki; Wang, Sheng Kai; Nagashio, Kosuke; Kita, Koji; Toriumi, Akira

Book ID: 126798826
Publisher: Institute of Pure and Applied Physics
Year: 2011
Tongue: English
Weight: 668 KB
Volume: 4
Category: Article
ISSN: 1882-0778
DOI: 10.1143/apex.4.064201

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