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Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

✍ Scribed by Lee, Minjoo L.; Fitzgerald, Eugene A.; Bulsara, Mayank T.; Currie, Matthew T.; Lochtefeld, Anthony

Book ID: 121724076
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 754 KB
Volume: 97
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1819976

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