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Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

✍ Scribed by Welser, J.; Hoyt, J.L.; Gibbons, J.F.

Book ID: 120998438
Publisher: IEEE
Year: 1994
Tongue: English
Weight: 311 KB
Volume: 15
Category: Article
ISSN: 0741-3106
DOI: 10.1109/55.285389

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