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Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

✍ Scribed by Takagi, Shin‐ichi; Hoyt, Judy L.; Welser, Jeffrey J.; Gibbons, James F.


Book ID
118750530
Publisher
American Institute of Physics
Year
1996
Tongue
English
Weight
461 KB
Volume
80
Category
Article
ISSN
0021-8979

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