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Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors

✍ Scribed by Pérez-Tomás, A.; Brosselard, P.; Godignon, P.; Millán, J.; Mestres, N.; Jennings, M. R.; Covington, J. A.; Mawby, P. A.

Book ID
121351388
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
825 KB
Volume
100
Category
Article
ISSN
0021-8979

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📜 SIMILAR VOLUMES

Inversion layer electron transport in 4H
Inversion layer electron transport in 4H-SiC metal-oxide-semiconductor field-effect transistors
✍ Tilak, Vinayak 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 491 KB

## Abstract Silicon carbide is the only compound semiconductor with silicon dioxide as its native oxide and can form metal–oxide–semiconductor field‐effect transistors. In this article, we review the inversion layer electron transport properties of 4H‐SiC/SiO~2~. The inversion layer electron transp