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Inversion layer carrier concentration and mobility in 4HâSiC metal-oxide-semiconductor field-effect transistors

✍ Scribed by Dhar, S.; Haney, S.; Cheng, L.; Ryu, S.-R.; Agarwal, A. K.; Yu, L. C.; Cheung, K. P.

Book ID: 120303837
Publisher: American Institute of Physics
Year: 2010
Tongue: English
Weight: 619 KB
Volume: 108
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3484043

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