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Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

✍ Scribed by Frazzetto, A.; Giannazzo, F.; Fiorenza, P.; Raineri, V.; Roccaforte, F.

Book ID: 117991498
Publisher: American Institute of Physics
Year: 2011
Tongue: English
Weight: 729 KB
Volume: 99
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3627186

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