✦ LIBER ✦
Extraction of SiO2/SiC interface trap profile in 4H- and 6H-SiC metal-oxide semiconductor field-effect transistors from subthreshold characteristics at 25°C and 150°C
✍ Scribed by Yanqing Deng; Wei Wang; Qizhi Fang; Mahalingam B. Koushik; T. Paul Chow
- Book ID
- 107453619
- Publisher
- Springer US
- Year
- 2006
- Tongue
- English
- Weight
- 147 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0361-5235
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