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Mobility and screening effect in heavily doped accumulation-mode metal-oxide-semiconductor field-effect transistors

✍ Scribed by Goto, Ken-Ichi; Yu, Tsung-Hsing; Wu, Jeff; Diaz, Carlos H.; Colinge, J. P.


Book ID
118154346
Publisher
American Institute of Physics
Year
2012
Tongue
English
Weight
489 KB
Volume
101
Category
Article
ISSN
0003-6951

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Inversion layer electron transport in 4H
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## Abstract Silicon carbide is the only compound semiconductor with silicon dioxide as its native oxide and can form metal–oxide–semiconductor field‐effect transistors. In this article, we review the inversion layer electron transport properties of 4H‐SiC/SiO~2~. The inversion layer electron transp