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GaN enhancement mode metal-oxide semiconductor field effect transistors

✍ Scribed by Y. Irokawa; Y. Nakano; M. Ishiko; T. Kachi; J. Kim; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; C.-C. Pan; G.-T. Chen; J.-I. Chyi

Book ID: 104557401
Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 97 KB
Volume: 2
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200461280

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