๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

High-Temperature Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors

โœ Scribed by Simin, G. ;Tarakji, A. ;Hu, X. ;Koudymov, A. ;Yang, J. ;Asif Khan, M. ;Shur, M.S. ;Gaska, R.


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
80 KB
Volume
188
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Microwave Simulation on the Performance
โœ Deng, J. ;Iรฑiguez, B. ;Shur, M. S. ;Gaska, R. ;Khan, M. A. ;Yang, J. W. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 119 KB ๐Ÿ‘ 2 views

We present the results of the simulation of dc and microwave performance of a GaN/AlGaN heterostructure field effect transistors and compare the results with recent record-breaking experimental data from Cree Research, Inc. Our simulation results are in good agreement with the data on the small sign

Dielectrophoresis and Chemically Mediate
โœ S.โ€‰W. Lee; R. Bashir ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 471 KB ๐Ÿ‘ 1 views

Directed self-assembly techniques, such as fluidic self-assembly, [1][2][3] liquid-solder-based self-assembly, [4,5] self-assembly using capillary forces in fluid, [6,7] and shape-and-solder-directed self-assembly, [8,9] has been studied by many researchers in recent years in order to implement micr