We present the results of the simulation of dc and microwave performance of a GaN/AlGaN heterostructure field effect transistors and compare the results with recent record-breaking experimental data from Cree Research, Inc. Our simulation results are in good agreement with the data on the small sign
โฆ LIBER โฆ
High-Temperature Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors
โ Scribed by Simin, G. ;Tarakji, A. ;Hu, X. ;Koudymov, A. ;Yang, J. ;Asif Khan, M. ;Shur, M.S. ;Gaska, R.
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 80 KB
- Volume
- 188
- Category
- Article
- ISSN
- 0031-8965
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Directed self-assembly techniques, such as fluidic self-assembly, [1][2][3] liquid-solder-based self-assembly, [4,5] self-assembly using capillary forces in fluid, [6,7] and shape-and-solder-directed self-assembly, [8,9] has been studied by many researchers in recent years in order to implement micr