AlGaN/GaN Heterostructure Field-Effect Transistors with High Al Compositions Fabricated with Selective-Area Regrowth

✍ Scribed by Maeda, N. ;Saitoh, T. ;Tusubaki, K. ;Kobayashi, N.

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 77 KB
• Volume: 188
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200111)188:1<223::aid-pssa223>3.0.co;2-4