Investigation for the Formation of Polarization-Induced Two-Dimensional Electron Gas in AlGaN/GaN Heterostructure Field Effect Transistors

✍ Scribed by H.W. Jang; C.M. Jeon; K.H. Kim; J.K. Kim; S.-B. Bae; J.-H. Lee; J.W. Choi; J.-L. Lee

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 84 KB
• Volume: 228
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200111)228:2<621::aid-pssb621>3.0.co;2-y