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Behaviors of gate induced drain leakage stress in lightly doped drain n-channel metal-oxide-semiconductor field-effect transistors

✍ Scribed by Ma, X. H.; Cao, Y. R.; Gao, H. X.; Chen, H. F.; Hao, Y.

Book ID: 118270265
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 642 KB
Volume: 95
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3250435

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