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Compact drain-current model for undoped cylindrical surrounding-gate metal-oxide-semiconductor field effect transistors including short channel effects

✍ Scribed by Smaani, Billel; Latreche, Saida; Iñiguez, Benjamín

Book ID: 121821490
Publisher: American Institute of Physics
Year: 2013
Tongue: English
Weight: 896 KB
Volume: 114
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.4844395

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