Quantum Mechanical Corrected Simulation Program with Integrated Circuit Emphasis Model for Simulation of Ultrathin Oxide Metal-Oxide-Semiconductor Field Effect Transistor Gate Tunneling Current

✍ Scribed by Li, Yiming; Yu, Shao-Ming; Lee, Jam-Wem

• Book ID: 127324289
• Publisher: Institute of Pure and Applied Physics
• Year: 2005
• Tongue: English
• Weight: 254 KB
• Volume: 44
• Category: Article
• ISSN: 0021-4922
• DOI: 10.1143/jjap.44.2132